STM8L052C6 datasheet(72/102 Pages) STMICROELECTRONICS

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Electrical parameters

STM8L052C6

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Doc ID 023331 Rev 1

8.3.5

Memory characteristics

TA = -40 to 85 °C unless otherwise specified.

Flash memory

8.3.6

I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard pins) should be avoided during normal product operation. However,

in order to give an indication of the robustness of the microcontroller in cases when

abnormal injection accidentally happens, susceptibility tests are performed on a sample

basis during device characterization.

Table 32.

RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization, not tested in production.

Halt mode (or Reset)

1.8

Table 33.

Flash program and data EEPROM memory

Symbol

Parameter

Conditions

Min

Typ

Max

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fSYSCLK = 16 MHz

1.8

3.6

tprog

Programming time for 1 or 64 bytes (block)

erase/write cycles (on programmed byte)

6ms

Programming time for 1 to 64 bytes (block)

write cycles (on erased byte)

3ms

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

0.7

TA=+25 °C, VDD = 1.8 V

tRET

(2)

Data retention (program memory) after 100

erase/write cycles at TA= –40 to +85 °C

TRET = +85 °C

30(1)

years

Data retention (data memory) after 100000

erase/write cycles at TA= –40 to +85 °C

TRET = +85 °C

30(1)

NRW

(3)

Erase/write cycles (program memory)

TA = –40 to +85 °C

100(1)

cycles

Erase/write cycles (data memory)

100(1)

(4)

kcycles

Data based on characterization results, not tested in production.

Conforming to JEDEC JESD22a117

The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.

Data based on characterization performed on the whole data memory.

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