PIC16F676-ESLASHST datasheet(85/132 Pages) MICROCHIP

85 / 132 page

 2010 Microchip Technology Inc.

DS40039F-page 85

PIC16F630/676

12.0 ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings†

Ambient temperature under bias........................................................................................................... -40 to +125°C

Storage temperature ........................................................................................................................ -65°C to +150°C

Voltage on VDD with respect to VSS ..................................................................................................... -0.3 to +6.5V

Voltage on MCLR with respect to Vss ..................................................................................................-0.3 to +13.5V

Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)

Total power dissipation(1) ............................................................................................................................... 800 mW

Maximum current out of VSS pin ..................................................................................................................... 300 mA

Maximum current into VDD pin ........................................................................................................................ 250 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

20 mA

Output clamp current, IOK (Vo < 0 or Vo >VDD)

20 mA

Maximum output current sunk by any I/O pin.................................................................................................... 25 mA

Maximum output current sourced by any I/O pin .............................................................................................. 25 mA

Maximum current sunk by PORTA and PORTC (combined) .......................................................................... 200 mA

Maximum current sourced PORTA and PORTC (combined) .......................................................................... 200 mA

Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD -

 IOH} +  {(VDD-VOH) x IOH} + (VOl x IOL).

† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

Note:

Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.

Thus, a series resistor of 50-100  should be used when applying a “low” level to the MCLR pin, rather than

pulling this pin directly to VSS.

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