STI10N62K3 datasheet(4/17 Pages) STMICROELECTRONICS

4 / 17 page

Electrical characteristics

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3

4/17

Doc ID 15640 Rev 4

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 4 A

0.68

0.75

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 15 V, ID = 4 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

1250

138

Co(tr)

(2)

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 496 V, VGS = 0

Co(er)

(3)

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

VDS = 0 to 496 V, VGS = 0

Gate input resistance

f=1 MHz Gate DC Bias=0 Test

signal level = 20 mV open

drain

-3.5

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 496 V, ID = 8 A,

VGS = 10 V

(see

Figure 18)

7.4

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