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TPD1036F bảng dữ liệu(PDF) 4 Page - Toshiba Semiconductor |
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TPD1036F bảng dữ liệu(HTML) 4 Page - Toshiba Semiconductor |
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4 / 9 page ![]() TPD1036F 2008-09-12 4 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage DC VDS 30 V Drain current ID Internally limited A Input voltage VIN −0.3 to 6 V Power dissipation (t = 10 s) (Note 2) PD 2.0 W Single pulse active clamp capability (Note 3) EAS 23 mJ Active clamp current IAR 1.5 A Repetitive active clamp capability (Note 4) EAR 0.2 mJ Operating temperature Topr −40 to 110 °C Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (Note 2) Rth (ch-a) 62.5 °C/W Note 2: Mount on glass epoxy boad [25.4 × 25.4 × 0.8mm] (with the two devices driving)(t =10 s) Note 3: Single pulse active clamp capability test condition VDD = 25 V, Tch = 25°C (initial), L = 10 mH, IAR = 1.5 A, RG = 25Ω Note 4: Repetitive rating: Pulse width limited by maximum channel temperature |
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