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MPC8377E bảng dữ liệu(PDF) 17 Page - Freescale Semiconductor, Inc |
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MPC8377E bảng dữ liệu(HTML) 17 Page - Freescale Semiconductor, Inc |
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17 / 127 page ![]() MPC8377E PowerQUICC II Pro Processor Hardware Specifications, Rev. 8 Freescale Semiconductor 17 6.1 DDR1 and DDR2 SDRAM DC Electrical Characteristics This table provides the recommended operating conditions for the DDR2 SDRAM component(s) of the device when GVDD(typ) = 1.8 V. Table 14 provides the DDR2 capacitance when GVDD(typ) = 1.8 V. This table provides the recommended operating conditions for the DDR SDRAM component(s) when GVDD(typ) = 2.5 V. Table 13. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V Parameter Symbol Min Max Unit Note I/O supply voltage GVDD 1.71 1.89 V 1 I/O reference voltage MVREF 0.49 × GVDD 0.51 × GVDD V2, 5 I/O termination voltage VTT MVREF –0.04 MVREF +0.04 V 3 Input high voltage VIH MVREF + 0.140 GVDD +0.3 V — Input low voltage VIL –0.3 MVREF – 0.140 V — Output leakage current IOZ –50 50 μA4 Output high current (VOUT =1.40V) IOH –13.4 — mA — Output low current (VOUT =0.3 V) IOL 13.4 — mA — Notes: 1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times. 2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak noise on MVREF may not exceed ±2% of the DC value. 3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal to MVREF. This rail should track variations in the DC level of MVREF. 4. Output leakage is measured with all outputs disabled, 0 V ≤ V OUT ≤ GVDD. 5. See AN3665, “MPC837xE Design Checklist,” for proper DDR termination. Table 14. DDR2 SDRAM Capacitance for GVDD(typ) = 1.8 V Parameter Symbol Min Max Unit Note Input/output capacitance: DQ, DQS, DQS CIO 68 pF 1 Delta input/output capacitance: DQ, DQS, DQS CDIO —0.5 pF 1 Note: 1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V. Table 15. DDR SDRAM DC Electrical Characteristics for GVDD (typ) = 2.5 V Parameter Symbol Min Max Unit Note I/O supply voltage GVDD 2.375 2.625 V 1 I/O reference voltage MVREF 0.49 × GVDD 0.51 × GVDD V2, 5 I/O termination voltage VTT MVREF – 0.04 MVREF + 0.04 V 3 Input high voltage VIH MVREF + 0.18 GVDD + 0.3 V — |
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