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L6226Q bảng dữ liệu(PDF) 19 Page - STMicroelectronics |
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L6226Q bảng dữ liệu(HTML) 19 Page - STMicroelectronics |
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19 / 29 page ![]() L6226Q Paralleled operation Doc ID 14335 Rev 5 19/29 6 Paralleled operation The outputs of the L6226Q can be paralleled to increase the output current capability or reduce the power dissipation in the device at a given current level. It must be noted, however, that the internal wire bond connections from the die to the power or sense pins of the package must carry current in both of the associated half bridges. When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak current rating is not increased since the total current must still flow through one bond wire on the power supply or sense pin. In addition the over current detection senses the sum of the current in the upper devices of each bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detection threshold. For most applications the recommended configuration is half bridge 1 of bridge A paralleled with the half bridge 1 of the bridge B, and the same for the half bridges 2 as shown in Figure 15. The current in the two devices connected in parallel will share very well since the RDS(on) of the devices on the same die is well matched. When connected in this configuration the over current detection circuit, which senses the current in each bridge (A and B), will sense the current in upper devices connected in parallel independently and the sense circuit with the lowest threshold will trip first. With the enables connected in parallel, the first detection of an over current in either upper DMOS device will turn of both bridges. Assuming that the two DMOS devices share the current equally, the resulting over current detection threshold will be twice the minimum threshold set by the resistors RCLA or RCLB in Figure 15. It is recommended to use RCLA = RCLB. In this configuration the resulting bridge has the following characteristics. ● Equivalent device: full bridge ● RDS(on) 0.37 Ω typ. value @ TJ = 25 °C ● 2.8 A max RMS load current ● 5.6 A max OCD threshold |
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