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APT97N65B2C6 bảng dữ liệu(PDF) 2 Page - Microsemi Corporation

tên linh kiện APT97N65B2C6
Giải thích chi tiết về linh kiện  Super Junction MOSFET
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nhà sản xuất  MICROSEMI [Microsemi Corporation]
Trang chủ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT97N65B2C6 bảng dữ liệu(HTML) 2 Page - Microsemi Corporation

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APT97N65B2_LC6
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
10-5
10-4
10-3
10-2
0.1
1
10
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
Input Capacitance
V
GS = 0V
V
DS = 25V
f = 1 MHz
7650
pF
C
oss
Output Capacitance
5045
C
rss
Reverse Transfer Capacitance
550
Q
g
Total Gate Charge 5
V
GS = 10V
V
DD = 325V
I
D = 97A @ 25°C
300
nC
Q
gs
Gate-Source Charge
50
Q
gd
Gate-Drain ("Miller") Charge
160
t
d(on)
Turn-on Delay Time
INDUCTIVE SWITCHING
V
GS = 15V
V
DD = 433V
I
D = 97A @ 25°C
R
G = 2.2Ω
25
ns
t
r
Rise Time
60
t
d(off)
Turn-off Delay Time
275
t
f
Fall Time
130
E
on
Turn-on Switching Energy 6
INDUCTIVE SWITCHING @ 25°C
V
DD = 433V, VGS = 15V
I
D = 97A, RG = 2.2Ω
2860
μJ
E
off
Turn-off Switching Energy
3500
E
on
Turn-on Switching Energy 6
INDUCTIVE SWITCHING @ 125°C
V
DD = 433V, VGS = 15V
I
D =97A, RG = 2.2Ω
4030
E
off
Turn-off Switching Energy
3695
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
I
S
Continuous Source Current (Body Diode)
97
Amps
I
SM
Pulsed Source Current 2 (Body Diode)
291
V
SD
Diode Forward Voltage 4 (V
GS = 0V, IS = -48.5A)
0.9
1.2
Volts
dv
/
dt
Peak Diode Recovery dv/
dt
7
50
V/ns
t
rr
Reverse Recovery Time
(I
S = -97A,
di
/
dt = 100A/μs)
T
j = 25°C
790
ns
Q
rr
Reverse Recovery Charge
(I
S = -97A,
di
/
dt = 100A/μs)
T
j = 25°C
19
μC
I
RRM
Peak Recovery Current
(I
S = -97A,
di
/
dt = 100A/μs)
T
j = 25°C
43
Amps
Symbol
Characteristic
MIN
TYP
MAX
UNIT
R
θJC
Junction to Case
0.145
°C/W
R
θJA
Junction to Ambient
40
1 Continuous current limited by package lead temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature
3 Repetitive avalanche causes additional power losses that can be calculated as
PAV = EAR*f . Pulse width tp limited by Tj max.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery.
7 Maximum 125°C diode commutation speed = di/dt 600A/μs



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