APT97N65B2C6 datasheet(1/5 Pages) MICROSEMI

tên linh kiện	APT97N65B2C6

Giải thích chi tiết về linh kiện	Super Junction MOSFET

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MAXIMUM RATINGS

All Ratings per die: T

C = 25°C unless otherwise speciﬁed.

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Ultra Low Gate Charge, Qg

• Avalanche Energy Rated

• Extreme dv/dt Rated

Super Junction MOSFET

C

Power Semiconductors

O

O LMOS

"COOLMOS™ comprise a new family of transistors developed by Inﬁneon Technologies AG. "COOLMOS" is a trade-

mark of Inﬁneon Technologies AG."

G

D

S

Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.

Microsemi Website - http://www.microsemi.com

APT97N65B2C6

APT97N65LC6

650V

97A

0.041

Ω

Symbol

Parameter

APT97N65B2_LC6

UNIT

V

DSS

Drain-Source Voltage

650

Volts

I

D

Continuous Drain Current @ T

C = 25°C

1

(assuming Rdson max = 0.041Ω)

97

Amps

Continuous Drain Current @ T

C = 100°C

62

I

DM

Pulsed Drain Current 2

291

V

GS

Gate-Source Voltage Continuous

±

20

Volts

P

D

Total Power Dissipation @ T

C = 25°C

862

Watts

T

J,TSTG

Operating and Storage Junction Temperature Range

-55 - to 150

°C

T

L

Lead Temperature: 0.063" from Case for 10 Sec.

260

I

AR

Avalanche Current 2

13.4

Amps

E

AR

Repetitive Avalanche Energy 3 ( Id = 13.4A, Vdd = 50V )

2.96

E

AS

Single Pulse Avalanche Energy

( Id = 13.4A, Vdd = 50V )

1954

mJ

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV

(DSS)

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250μA)

650

Volts

R

DS(on)

Drain-Source On-State Resistance 4 (V

GS = 10V, ID = 48.5A)

0.037

0.041

Ohms

I

DSS

Zero Gate Voltage Drain Current (V

DS = 650V, VGS = 0V)

25

μA

Zero Gate Voltage Drain Current (V

DS = 650V, VGS = 0V, TC = 150°C)

250

I

GSS

Gate-Source Leakage Current (V

GS = ±20V, VDS = 0V)

±100

nA

V

GS(th)

Gate Threshold Voltage (V

DS = VGS, ID = 2.96mA)

2.5

3

3.5

Volts

STATIC ELECTRICAL CHARACTERISTICS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

TO-264

T-Max

®

APT97N65B2C6

APT97N65LC6

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