DMN3150L datasheet(1/5 Pages) DIODES

tên linh kiện	DMN3150L

Giải thích chi tiết về linh kiện	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN3150L

Document number: DS31126 Rev. 8 - 2

1 of 5

www.diodes.com

August 2009

DMN3150L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance:

RDS(ON) < 54mΩ @ VGS = 10V

RDS(ON) < 72mΩ @ VGS = 4.5V

RDS(ON) < 115mΩ @ VGS = 2.5V

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.008 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Note 1)

TA = 25°C

TA = 70°C

ID

3.8

3.1

A

Drain Current (Note 1)

Pulsed

IDM

15

A

Body-Diode Continuous Current (Note 1)

IS

2.0

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

PD

1.4

W

Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)

RθJA

90

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

SOT-23

TOP VIEW

Source

EQUIVALENT CIRCUIT

Gate

Drain

D

GS

Pin Configuration

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Số phần tương tự - DMN3150L

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	DMN3150LW-7	169Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS31514 Rev. 1 - 2
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