General Description
This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package.
   
Features
■ 5.2 A, 30 V.  RDS(ON) = 0.042 W @ VGS = 4.5 V
                        RDS(ON) = 0.054 W @ VGS = 2.5 V.
■ SuperSOT™-6 package design using copper lead frame for
    superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current
    capability.