DMN3150L

Document number: DS31126 Rev. 8 - 2

2 of 5

www.diodes.com

August 2009

© Diodes Incorporated

DMN3150L

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

800

nA

Gate-Body Leakage

⎯

⎯

±80

±800

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

0.62

0.92

1.4

V

Static Drain-Source On-Resistance

⎯

⎯

39

52

90

54

72

115

m

Ω

Forward Transconductance

⎯

3

⎯

S

Source-Drain Diode Forward Voltage

⎯

⎯

1.16

V

DYNAMIC CHARACTERISTICS

Gate Resistance

-

4.17

-

Ω

f = 1MHz

Total Gate Charge (10V)

-

8.2

-

nC

Total Gate Charge (4.5V)

-

3.7

-

nC

Gate-Source Charge

-

0.7

-

nC

Gate-Drain Charge

-

1.1

-

nC

Turn-On Delay Time

-

1.14

-

ns

Turn-On Rise Time

-

3.49

-

ns

Turn-Off Delay Time

-

15.02

-

ns

Turn-Off Fall Time

-

3.26

-

ns

Input Capacitance

⎯

305

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

74

⎯

pF

Reverse Transfer Capacitance

⎯

48

⎯

pF

Notes:

1. Device mounted on FR-4 PCB. t

≤5 sec.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Short duration pulse test used to minimize self-heating effect.

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS

V

, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

GS

V

= 5V

Pulsed

DS