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TLE7184F bảng dữ liệu(PDF) 14 Page - Infineon Technologies AG

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Giải thích chi tiết về linh kiện  System IC for B6 motor drives
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TLE7184F
MOSFET Driver
Data Sheet
14
Rev. 1.0, 2008-12-04
5.4.11
High level output voltage GLx vs.
GND
V
Gxx4
6.7
––V
V
VS=8V,
C
load=20nF,
dc=94%;
f
PWM=20kHz;
5.4.12
Rise time
t
rise
–200
–ns
C
Load=11nF;
R
Load=1Ω
V
VS=7V
20-80%
5.4.13
Fall time
t
fall
–200
–ns
5.4.14
High level output voltage (in
passive clamping)
V
GUV
––1.2
V
sleep mode or
VS_UVLO1) 4)
5.4.15
Pull-down resistor at BHx to GND
R
BHUV
––80
k
Ω
5.4.16
Pull-down resistor at VREG to GND
R
VRUV
––30
k
Ω
5.4.17
Bias current into BHx
I
BH
––150
µA
V
BHx-VSHx=5...13V;
no switching
5.4.18
Current between BHx and SHx
I
BSH
15
35
60
µA
V
BHx-VSHx=5...13V
5.4.19
Resistor between SHx and GND
R
SHGN
48
80
112
k
Ω
5.4.20
Bias current out of SL
I
SL
––2mA
0V<=VSH<=VS+1
V; no switching;
V
CBS>5V
5.4.21
Input propagation time (low on)
t
P(ILN)
0
–
200
ns
C=11nF; R
Load=1Ω
5.4.22
Input propagation time (low off)
t
P(ILF)
0
–
200
ns
5.4.23
Input propagation time (high on)
t
P(IHN)
0
–
200
ns
5.4.24
Input propagation time (high off)
t
P(IHF)
0
–
200
ns
5.4.25
Absolute input propagation time
difference between above
propagation times
t
P(diff)
–
–
100
ns
VREG
5.4.26
VREG output voltage
V
VREG
11
12.5
14
V
V
VS >= 13,5V;
I
load=37,5mA
5.4.27
VREG over current limitation
I
VREGOCL
100
–
500
mA
no activation of
error;
V
VREG>VVRSD
5.4.28
Voltage drop between Vs and
VREG
V
VsVREG
––0.5
V
V
VS>= 7V;
I
load=37,5mA;
Ron operation
1) Not subject to production test; specified by design
2) Values above 33V not subjected to production test; specified by design
3)
V
diode is the bulk diode of the external low side MOSFET
4) see Chapter 9.2.15
Electrical Characteristics MOSFET Drivers
V
S = 7.0 to 33 V, Tj = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Typ.
Max.



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