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TLE7184F bảng dữ liệu(PDF) 14 Page - Infineon Technologies AG |
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TLE7184F bảng dữ liệu(HTML) 14 Page - Infineon Technologies AG |
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14 / 35 page ![]() TLE7184F MOSFET Driver Data Sheet 14 Rev. 1.0, 2008-12-04 5.4.11 High level output voltage GLx vs. GND V Gxx4 6.7 ––V V VS=8V, C load=20nF, dc=94%; f PWM=20kHz; 5.4.12 Rise time t rise –200 –ns C Load=11nF; R Load=1Ω V VS=7V 20-80% 5.4.13 Fall time t fall –200 –ns 5.4.14 High level output voltage (in passive clamping) V GUV ––1.2 V sleep mode or VS_UVLO1) 4) 5.4.15 Pull-down resistor at BHx to GND R BHUV ––80 k Ω 5.4.16 Pull-down resistor at VREG to GND R VRUV ––30 k Ω 5.4.17 Bias current into BHx I BH ––150 µA V BHx-VSHx=5...13V; no switching 5.4.18 Current between BHx and SHx I BSH 15 35 60 µA V BHx-VSHx=5...13V 5.4.19 Resistor between SHx and GND R SHGN 48 80 112 k Ω 5.4.20 Bias current out of SL I SL ––2mA 0V<=VSH<=VS+1 V; no switching; V CBS>5V 5.4.21 Input propagation time (low on) t P(ILN) 0 – 200 ns C=11nF; R Load=1Ω 5.4.22 Input propagation time (low off) t P(ILF) 0 – 200 ns 5.4.23 Input propagation time (high on) t P(IHN) 0 – 200 ns 5.4.24 Input propagation time (high off) t P(IHF) 0 – 200 ns 5.4.25 Absolute input propagation time difference between above propagation times t P(diff) – – 100 ns VREG 5.4.26 VREG output voltage V VREG 11 12.5 14 V V VS >= 13,5V; I load=37,5mA 5.4.27 VREG over current limitation I VREGOCL 100 – 500 mA no activation of error; V VREG>VVRSD 5.4.28 Voltage drop between Vs and VREG V VsVREG ––0.5 V V VS>= 7V; I load=37,5mA; Ron operation 1) Not subject to production test; specified by design 2) Values above 33V not subjected to production test; specified by design 3) V diode is the bulk diode of the external low side MOSFET 4) see Chapter 9.2.15 Electrical Characteristics MOSFET Drivers V S = 7.0 to 33 V, Tj = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. |
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