R5F64112NFB datasheet(69/105 Pages) RENESAS

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REJ03B0227-0110 Rev.1.10 Sep 17, 2009

Page 69 of 99

R32C/111 Group

5. Electrical Characteristics

Timing Requirements (VCC1 = VCC2 = 3.0 to 5.5 V, VSS =0 V, and Ta =Topr, unless otherwise noted)

Figure 5.5

Flash Memory CPU Rewrite Mode Timing

Table 5.14

Flash Memory CPU Rewrite Mode Timing

Symbol

Characteristics

Value

Unit

Min.

Max.

tcR

Read cycle time

200

tsu(S-R)

Chip-select setup time for read

200

th(R-S)

Chip-select hold time after read

0ns

tsu(A-R)

Address setup time for read

200

th(R-A)

Address hold time after read

0ns

tw(R)

Read pulse width

100

tcW

Write cycle time

200

tsu(S-W)

Chip-select setup time for write

0ns

th(W-S)

Chip-select hold time after write

tsu(A-W)

Address setup time for write

0ns

th(W-A)

Address hold time after write

tw(W)

Write pulse width

CS0

A23 to A0, BC0 to BC3

t h(R-S)

Read cycle

t w(R)

t su(S-R)

t h(R-A)

t su(A-R)

Write cycle

CS0 to CS3

A23 to A0, BC0 to BC3

t h(W-S)

t w(W)

t su(S-W)

t h(W-A)

t su(A-W)

t cW

t cR

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