M16CSLASH62 datasheet(250/621 Pages) RENESAS

250 / 621 page

Mitsubishi microcomputers

M16C / 62 Group

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description (Flash Memory Version)

235

Item

Power supply voltage

Program/erase voltage

Flash memory operation mode

Erase block

division

Program method

Erase method

Program/erase control method

Protect method

Number of commands

Program/erase count

ROM code protect

Performance

5V version: 2.7V to 5.5 V

(f(XIN)=16MHz, without wait, 4.2V to 5.5V,

f(XIN)=10MHz, with one wait, 2.7V to 5.5V)

3V version: 2.4V to 3.6 V

(f(XIN)=10MHz, without wait, 2.7V to 3.6V,

f(XIN)=7MHz, without wait, 2.4V to 3.6V)

5V version: 4.2V to 5.5 V

(f(XIN)=12.5MHz, with one wait,

f(XIN)=6.25MHz, without wait)

3V version: 2.7V to 3.6 V

(f(XIN)=10MHz, with one wait,

f(XIN)=6.25MHz, without wait)

Three modes (parallel I/O, standard serial I/O, CPU rewrite)

See Figure 1.28.1

One division (8 Kbytes) (Note 1)

In units of pages (in units of 256 bytes)

Collective erase/block erase

Program/erase control by software command

Protected for each block by lock bit

8 commands

100 times

Parallel I/O and standard serial modes are supported.

Note1: The boot ROM area contains a standard serial I/O mode control program which is stored in it when shipped from the factory.

This area can be erased and programmed in only parallel I/O mode.

Note2: Refer to recommended operating conditions about 5 V version. 3V version relationship between main clock oscillation

frequency and supply voltage are as follows.

User ROM area

Boot ROM area

3V version main clock input

oscillation frequency(Max.)

(Note2)

10MHz (VCC=2.7V to 3.6V,without wait)

10 X VCC - 17 MHz (VCC=2.4V to 2.7V,without wait)

3V version power supply

current (Notes 3, 4)

12.0mA(Typ.), 21.25mA(Max.) (VCC=3V, f(XIN)=10MHz, square wave, no division, without wait)

40µA(Typ.) (VCC=3V, f(XCIN)=32kHz, square wave, without wait) [operate in RAM]

Note3: Refer to electric characteristic about 5V version.

Note4: A standard value in stop and wait modes do not depend on a kind of memory to have built-in and is the same class. Refer to

electric characteristic in VCC=3V.

Main clock input oscillation frequency

(flash memory 3V version, without wait)

10.0

7.0

0.0

2.4

2.7

3.6

Supply voltage

[V] (BCLK: no division)

10 X VCC - 17MHZ

700µA(Typ.) (VCC=3V, f(XCIN)=32kHz, square wave, without wait) [operate in flash memory]

Table 1.28.1. Outline Performance of the M16C/62 (flash memory version)

Outline Performance

Table 1.28.1 shows the outline performance of the M16C/62 (flash memory version) and Table 1.28.2

shows the power supply current( Typ.).

5V power supply current(5V version)

f(XIN)=16MHz, without wait, No division

35mA

28mA

25mA

Remark

Division by 4 in program/erase

3V power supply current(5V version)

f(XIN)=10MHz, with wait, No division

13.5mA

3V power supply current(3V version)

f(XIN)=10MHz, without wait, No division

12mA

17mA

14mA

Parameter

Measuring condition

Standard (Typ.)

Read

Program

Erase

Division by 2 in program/erase

Table 1.28.2. Power supply current (typ.) of the M16C/62 (flash memory version)

M16C/62 bảng dữ liệu(PDF) 250 Page - Renesas Technology Corp

M16C/62 bảng dữ liệu(HTML) 250 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

bảng dữ liệu tải về

Link URL