M5M5V216ATP,RT

revision-03, 14.Jan.'03

2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM

MITSUBISHI LSIs

7

ns

ms

2.2V

2.7V

2.7V

2.2V

BC1 , BC2

Vcc - 0.2V

Vcc

V

V

2.0

2.0

BC1

~ +40ºC

-40 ~ +25ºC

8

1

0.3

1

3

-

-

24

-

-

-

-

µA

µA

µA

µA

POWER DOWN CHARACTERISTICS

(1) ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

Limits

Min

Typ

Max

Units

Power down supply voltage

Chip select input S

Power down

supply c urrent

Vcc=3.0V

(2) TIMING REQUIREMINTS

Symbol

Parameter

Test conditions

Limits

Min

Typ

Max

Units

Power down set up time

Power down recov ery t ime

(3) TIMING DIAGRAM

BC control mode

2.2V

2.7V

2.7V

2.2V

Vcc

S

S control mode

Byte control input BC1 & BC2

V

2.0

>

=

BC2

S

Vcc - 0.2V

>

=

0

5

~ +70ºC

~ +85ºC

2) BC1 and BC2 Vcc - 0.2V

S 0.2V, other inputs=0~Vcc

<

=

>

=

1) S Vcc - 0.2V

other inputs=0~Vcc

>

=

Note 7: Typical parameter of Icc(PD) indicates the value for the

center of distribution at 3.0V, and not 100% tested.

Note8: On the BC# control mode, the lev el of S# must be f ixed at S# > Vcc-0.2V or S# < 0.2V.