M38261EBFS datasheet(64/91 Pages) RENESAS

64 / 91 page

Rev.1.00

Sep 06, 2006

page 64 of 88

REJ03B0181-0100

3826 Group (One Time PROM version)

Table 20 Electrical characteristics (2)

(VCC =2.5 to 5.5 V, Ta = –20 to 85°C, unless otherwise noted)

5.5

• High-speed mode, VCC = 5 V

f(XIN) = 8 MHz

f(XCIN) = 32.768 kHz

Output transistors “off”

A/D converter in operating

• High-speed mode, VCC = 5 V

f(XIN) = 8 MHz (in WIT state)

f(XCIN) = 32.768 kHz

Output transistors “off”

A/D converter stop

• Low-speed mode, VCC = 5 V, Ta ≤ 55°C

f(XIN) = stopped

f(XCIN) = 32.768 kHz

Output transistors “off”

• Low-speed mode, VCC = 5 V, Ta = 25°C

f(XIN) = stopped

f(XCIN) = 32.768 kHz (in WIT state)

Output transistors “off”

• Low-speed mode, VCC = 3 V, Ta ≤ 55°C

f(XIN) = stopped

f(XCIN) = 32.768 kHz

Output transistors “off”

• Low-speed mode, VCC = 3 V, Ta = 25°C

f(XIN) = stopped

f(XCIN) = 32.768 kHz (in WIT state)

Output transistors “off”

All oscillation stopped

(in STP state)

Output transistors “off”

Symbol

Parameter

Limits

Min.

Unit

Typ.

Max.

Ta = 25 °C

Ta = 85 °C

Test conditions

ICC

Power source current

6.4

VRAM

RAM retention voltage

At clock stop mode

2.0

When using voltage multiplier

VL1 = 1.8 V

VL1

IL1

Power source voltage

Power source current

(VL1)

(Note)

Note: When the voltage multiplier control bit of the LCD mode register (bit 4 at address 003916) is “1”.

1.3

1.6

4.5

0.1

1.8

4.0

3.2

9.0

1.0

2.3

µA

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