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STTS424E02BDA3F bảng dữ liệu(PDF) 30 Page - STMicroelectronics

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STTS424E02BDA3F bảng dữ liệu(HTML) 30 Page - STMicroelectronics

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SPD EEPROM operation
STTS424E02
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Figure 10.
Result of setting the write protection
5.4
Setting the write protection
The Write Control (WC) is tied Low, hence the write protection of the memory array is
dependent on whether software write-protection has been set.
Software write-protection allows the bottom half of the memory area (addresses 00h to 7Fh)
to be write protected irrespective of subsequent states of the Write Control (WC) signal.
Software write-protection is handled by three instructions:
SWP: Set write protection
CWP: Clear write protection
PSWP: Permanently set write protection
The level of write-protection (set or cleared) that has been defined using these instructions,
remains defined even after a power cycle.
Table 21.
Operating modes
Mode
RW bit
WC(1)
1.
X = VIH or VIL.
Bytes
Initial sequence
Current address read
1
X
1
START, device select, RW = 1
Random address read
0X
1
START, device select, RW = 0, address
1
X
reSTART, device select, RW = 1
Sequential read
1
X
≥ 1
Similar to current or random address read
Byte write
0
V
IL
1
START, device select, RW = 0
Page write
0
V
IL
≤ 16
START, device select, RW = 0
Default EEPROM memory area
state before write access
to the Protect Register
AI01936C
Standard
Array
FFh
Standard
Array
80h
7Fh
00h
Standard
Array
FFh
Write
Protected
Array
80h
7Fh
00h
State of the EEPROM memory
area after write access
to the Protect Register
Memory
Area



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