V54C365804VC datasheet(1/54 Pages) MOSEL

tên linh kiện	V54C365804VC

Giải thích chi tiết về linh kiện	HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8

PDF	54 Pages

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nhà sản xuất	MOSEL [Mosel Vitelic, Corp]

Trang chủ	http://www.moselvitelic.com

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MOSEL VITELIC

1

V54C365804VC

HIGH PERFORMANCE 143/133/125 MHz

3.3 VOLT 8M X 8 SYNCHRONOUS DRAM

4 BANKS X 2Mbit X 8

V54C365804VC Rev. 0.6 September 1999

PRELIMINARY

7

75

8PC

8

System Frequency (fCK)

143MHz

133MHz

125 MHz

Clock Cycle Time (tCK3)

7 ns

7.5 ns

8 ns

Clock Access Time (tAC3) CAS Latency = 3

5.4 ns

6 ns

7 ns

Clock Access Time (tAC2) CAS Latency = 2

5.5 ns

6 ns

7 ns

Features

s 4 banks x 2Mbit x 8 organization

s High speed data transfer rates up to 143 MHz

s Full Synchronous Dynamic RAM, with all signals

referenced to clock rising edge

s Single Pulsed RAS Interface

s Data Mask for Read/Write Control

s Four Banks controlled by BA0 & BA1

s Programmable CAS Latency: 2, 3

s Programmable Wrap Sequence: Sequential

or Interleave

s Programmable Burst Length:

1, 2, 4, 8 and full page for Sequential Type

1, 2, 4, 8 for Interleave Type

s Multiple Burst Read with Single Write Operation

s Automatic and Controlled Precharge Command

s Random Column Address every CLK (1-N Rule)

s Suspend Mode and Power Down Mode

s Auto Refresh and Self Refresh

s Refresh Interval: 4096 cycles/64 ms

s Available in 54 Pin 400 mil TSOP-II

s LVTTL Interface

s Single +3.3 V

±0.3 V Power Supply

Description

The V54C365804VC is a four bank Synchronous

DRAM organized as 4 banks x 2Mbit x 8. The

V54C365804VC achieves high speed data transfer

rates up to 143 MHz by employing a chip architec-

ture that prefetches multiple bits and then synchro-

nizes the output data to a system clock

All of the control, address, data input and output

circuits are synchronized with the positive edge of

an externally supplied clock.

Operating the four memory banks in an inter-

leaved fashion allows random access operation to

occur at higher rate than is possible with standard

DRAMs. A sequential and gapless data rate of up to

143 MHz is possible depending on burst length,

CAS latency and speed grade of the device.

Device Usage Chart

Operating

Temperature

Range

Package Outline

Access Time (ns)

Power

Temperature

Mark

T

7

75

8PC

8

Std.

L

0

°C to 70°C

•

Blank

Số phần tương tự - V54C365804VC

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Mosel Vitelic, Corp	V54C365804VD	798Kb / 54P	HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Mosel Vitelic, Corp	V54C365164VC	1Mb / 54P	HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
	V54C365164VD	946Kb / 56P	HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
	V54C365404VD	799Kb / 54P	HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4
	V54C365804VD	798Kb / 54P	HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
	V58C265804S	457Kb / 44P	HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8
A-Data Technology	ADS8608A8A	533Kb / 8P	Synchronous DRAM(8M X 8 Bit X 4 Banks) Rev 1.0 December, 2001
A-Data Technology	VDS8608A8A	545Kb / 8P	Synchronous DRAM(8M X 8 Bit X 4 Banks) Rev 1.0 December, 2001
Mosel Vitelic, Corp	V54C3128804VAT	362Kb / 43P	HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
Hynix Semiconductor	HY57V121620	160Kb / 12P	4 Banks x 8M x 16Bit Synchronous DRAM
Hynix Semiconductor	HY57V56820B	151Kb / 12P	4 Banks x 8M x 8Bit Synchronous DRAM

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