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M58LW032D110N1 bảng dữ liệu(PDF) 37 Page - STMicroelectronics |
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M58LW032D110N1 bảng dữ liệu(HTML) 37 Page - STMicroelectronics |
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37 / 51 page ![]() 37/51 M58LW032D Table 26. CFI - Device Voltage and Timing Specification Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV. 2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV. 3. Not supported. 4. In x8 mode, A0 must be set to VIL, otherwise 00h will be output. Table 27. Device Geometry Definition Note: 1. In x8 mode, A0 must be set to VIL, otherwise 00h will be output. Address Data Description x16 x8(4) 001Bh 36h 27h (1) VDD Min, 2.7V 001Ch 38h 36h (1) VDD max, 3.6V 001Dh 3Ah 00h (2) VPP min – Not Available 001Eh 3Ch 00h (2) VPP max – Not Available 001Fh 3Eh 04h 2n µs typical time-out for Word, DWord prog – Not Available 0020h 40h 08h 2n µs, typical time-out for max buffer write 0021h 42h 0Ah 2n ms, typical time-out for Erase Block 0022h 44h 00h (3) 2n ms, typical time-out for chip erase – Not Available 0023h 46h 04h 2n x typical for Word Dword time-out max – Not Available 0024h 48h 04h 2n x typical for buffer write time-out max 0025h 4Ah 04h 2n x typical for individual block erase time-out maximum 0026h 4Ch 00h (3) 2n x typical for chip erase max time-out – Not Available Address Data Description x16 x8(1) 0027h 4Eh 16h n where 2n is number of bytes memory Size 0028h 50h 02h Device Interface 0029h 52h 00h Organization Sync./Async. 002Ah 54h 05h Maximum number of bytes in Write Buffer, 2n 002Bh 56h 00h 002Ch 58h 01h Bit7-0 = number of Erase Block Regions in device 002Dh 5Ah 1Fh Number (n-1) of Erase Blocks of identical size; n=64 002Eh 5Ch 00h 002Fh 5Eh 00h Erase Block Region Information x 256 bytes per Erase block (128K bytes) 0030h 60h 02h |
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