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M58LW032D110N1 bảng dữ liệu(PDF) 20 Page - STMicroelectronics

tên linh kiện M58LW032D110N1
Giải thích chi tiết về linh kiện  32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
PDF  51 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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M58LW032D110N1 bảng dữ liệu(HTML) 20 Page - STMicroelectronics

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M58LW032D
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Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Effective byte programming time 6µs, effective word programming time 12µs.
4. Maximum value measured at worst case conditions for both temperature and VDD after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and VDD.
Parameters
M58LW032D
Unit
Min
Typ(1,2)
Max(2)
Block (1Mb) Erase
1.2
4.8(4)
s
Chip Program (Write to Buffer)
24
72(4)
s
Chip Erase Time
37
110 (4)
s
Program Write Buffer
192 (3)
576 (4)
µs
Word/Byte Program Time
(Word/Byte Program command)
16
48 (4)
µs
Program Suspend Latency Time
1
20 (5)
µs
Erase Suspend Latency Time
1
25 (5)
µs
Block Protect Time
18
30 (5)
µs
Blocks Unprotect Time
0.75
1.2 (5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years



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