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STM32WB09TE bảng dữ liệu(PDF) 39 Page - STMicroelectronics

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Table 15. Main performance SMPS bypassed
Symbol
Parameter
Test conditions
Typ.
VDD = 1.8 V
Typ.
VDD = 3.3 V
Unit
ICORE
Core current
consumption
Shutdown
12
25
nA
Deepstop, no timer,
wake up GPIO, RAM0
retained
0.59
0.60
µA
Deepstop, no timer,
wake up GPIO, all
RAM retained
0.72
0.74
Deepstop (32 kHz
LSI), RAM0 retained
1.05
1.15
Deepstop (32 kHz
LSI), all RAMs
retained
1.19
1.28
Deepstop (32 kHz
LSE ), RAM0 retained
0.85
0.94
Deepstop (32 kHz
LSE), all RAM retained
0.98
1.08
CPU in Run (64 MHz).
Dhrystone, clock
source PLL64
4617
4635
CPU in Run (32 MHz).
Dhrystone, clock
source PLL64
3532
3627
CPU in RUN (16
MHz), all peripherals
off, clock source
PLL64
1930
1630
CPU in RUN (16
MHz), all peripherals
off, clock source HSE
1497
1395
CPU in WFI (64 MHz),
all peripherals off,
clock source PLL64
1904
1926
CPU in WFI (32 MHz),
all peripherals off,
clock source PLL64
1587
1436
CPU in WFI (16 MHz),
all peripherals off,
clock source PLL64
1860
1583
CPU in WFI (16 MHz),
all peripherals off,
clock source Direct
HSE
829
853
Radio RX at sensitivity
level
-
8301
Radio TX 0 dBm
output power
-
9681
Radio RX at sensitivity
level with CPU in WFI
(32MHz), clock source
Direct HSE
-
9171
STM32WB09xE
Electrical characteristics
DS14210 - Rev 6
page 39/73



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