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APM32F003F6P6-R bảng dữ liệu(PDF) 27 Page - Geehy Semiconductor Co., Ltd.

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Giải thích chi tiết về linh kiện  Arm® Cortex®-M0 based 32-bit MCU
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APM32F003F6P6-R bảng dữ liệu(HTML) 27 Page - Geehy Semiconductor Co., Ltd.

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Page 26
Flash memory characteristics
Table 21 Flash storage characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
tprog
16-bit programming time
TA=-40~105°C
VDD=2.95~5.0V
22.4
22.97
23.8
μs
tERASE
Page (1kbyte) erase time
TA=-40~105°C
VDD=2.95~5.0V
1.48
1.55
1.64
ms
tME
Whole erase time
TA=25°C
VDD=3.3V
6.32
6.57
6.96
ms
Vprog
Programming voltage
TA=-40~105°C
2
-
5.5
V
tRET
Data saving time
TA=125°C
18
-
-
years
NRW
Erase cycle
TA=25°C
100K
-
-
cycles
Clock
5.5.1.
External clock source characteristics
High Speed External Clock Generated by Crystal Resonator (HXT osc)
For detailed parameters (frequency, package, precision, etc.) of crystal
resonator, please consult the corresponding manufacturer.
Table 22 Characteristics of HXT 1-24MHz oscillator
Symbol
Parameter
Condition
Min
Typ
Max
Unit
fHXT
Oscillator frequency
-
1
-
24
MHz
RF
Feedback resistance
-
-
300
-
kΩ
C
Recommended load
capacitance
-
-
-
20
pF
IDD(HXT)
HXT oscillator power
consumption
C=20pF,
fOSC=16MHz
-
-
6 (startup) 1.6
(stabilized)
mA
C=10pF,
fOSC=16MHz
-
-
6 (startup) 1.2
(stabilized)
tSU(HXT)
Startup time
VDD is stable
-
1
-
ms
5.5.2.
Internal clock source characteristics
Test of High Speed Internal (HIRC) Oscillator
Table 23 HIRC oscillator characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
fHIRC
Frequency
-
-
48
-
MHz



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