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M36DR432BD bảng dữ liệu(PDF) 9 Page - STMicroelectronics

tên linh kiện M36DR432BD
Giải thích chi tiết về linh kiện  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
PDF  52 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36DR432BD bảng dữ liệu(HTML) 9 Page - STMicroelectronics

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M36DR432AD, M36DR432BD
the memory and reduces the power consumption
to the standby level. ES can also be used to con-
trol writing to the SRAM memory array, while WS
remains at VIL. It is not allowed to set EF at VIL and
ES at VIL at the same time.
SRAM Write Enable (WS). The Write Enable in-
put controls writing to the SRAM memory array.
WS is active Low.
SRAM Output Enable (GS). The Output Enable
gates the outputs through the data buffers during
a read operation of the SRAM chip. GS is active
Low.
SRAM Upper Byte Enable (UBS). Enables
the
upper bytes for SRAM (DQ8-DQ15). UBS is active
Low.
SRAM Lower Byte Enable (LBS). Enables the
lower bytes for SRAM (DQ0-DQ7). LBS is active
Low.
VDDS Supply Voltage (1.65V to 2.2V). VDDS is the
SRAM power supply for all operations.
Note: Each device in a system should have
VDDF and VPPF decoupled with a 0.1µF capaci-
tor close to the pin. See Figure 7, AC Measure-
ment Load Circuit. The PCB trace widths
should be sufficient to carry the required VPPF
program and erase currents.



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