STPSC4H065 datasheet(4/14 Pages) STMICROELECTRONICS

tên linh kiện	STPSC4H065

Giải thích chi tiết về linh kiện	650 V, 4 A high surge silicon carbide power Schottky diode

PDF	14 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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4 / 14 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, low level)

IF (

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VF (V)

Figure 2. Forward voltage drop versus forward current

(typical values, high level)

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

IF (A)

VF (V)

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100 150 200 250 300 350 400 450 500 550 600 650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

Figure 4. Peak forward current versus case temperature

(TO-220AC, DPAK)

I M (A)

100

125

150

175

= 0.1

= 0.3

= 0.5

= 1

= 0.7

TC(°C)

=tp/T

STPSC4H065

Characteristics (curves)

DS9222 - Rev 6

page 4/14

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