TO-220AC

TO-220AC ins.

DPAK

Features

•

No reverse recovery charge in application current range

•

Switching behavior independent of temperature

•

High forward surge capability

•

Insulated package TO-220AC Ins:

–

Insulated voltage: 2500 VRMS

–

Typical package capacitance: 7 pF

•

Power efficient product

•

ECOPACK®2 compliant component

Applications

•

Switch mode power supply

•

PFC

•

DCDC converters

•

LLC topologies

•

Boost diode

Description

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

This STPSC4H065 is especially suited for use in PFC applications. This ST SiC

diode will boost the performance in hard switching conditions. Its high forward surge

capability ensures a good robustness during transient phases.

Product status

STPSC4H065

Product summary

Symbol

Value

IF(AV)

4 A

VRRM

650 V

Tj(max.)

175 °C

Product label

650 V, 4 A high surge silicon carbide power Schottky diode

STPSC4H065

Datasheet

DS9222 - Rev 6 - January 2020

For further information contact your local STMicroelectronics sales office.

www.st.com