STPSC4H065 datasheet(5/14 Pages) STMICROELECTRONICS

tên linh kiện	STPSC4H065

Giải thích chi tiết về linh kiện	650 V, 4 A high surge silicon carbide power Schottky diode

PDF	14 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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5 / 14 page

Figure 5. Peak forward current versus case temperature

(TO-220AC Ins.)

I M (A)

100

125

150

175

= 0.1

= 0.3

= 0.5

= 1

= 0.7

=tp/T

TC(°C)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

100

150

200

250

0.1

1.0

10.0

100.0

1000.0

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

VR(V)

Cj (pF)

Figure 7. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220AC and DPAK)

Zth(j-c) /Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-0

1.E+00

Single pulse

tp(s)

Figure 8. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220AC Ins.)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

Zth(j-c)/Rth(j-c)

tp(s)

Figure 9. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform)

IFSM(A)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

Ta=25 °C

Ta=125 °C

tp(s)

Figure 10. Total capacitive charges versus reverse

voltage applied (typical values)

100

150

200

250

300

350

400

VR (V)

Qcj (nC)

STPSC4H065

Characteristics (curves)

DS9222 - Rev 6

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