TLV3012 datasheet(24/41 Pages) TI2

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The VHYST voltage sets the value of the transition voltage required to switch the comparator output by increasing

the threshold region, thereby reducing sensitivity to noise.

10.1.2 TLV3011B and TLV3012B Hysteresis

The TLV3011B and TLV3012B have typically 6mV of built-in hysteresis. External hysteresis can still be added as

explained in the previous section.

10.2 Typical Application

10.2.1 Under-Voltage Detection

Under-voltage detection is frequently required to alert the system that a battery voltage has dropped below

the usable voltage level. Figure 23 shows a simple under-voltage detection circuit using the TLV3012 which is

configured as a non-inverting comparator with the integrated 1.242 V reference is externally connected to the

inverting input pin (IN-).

–

1.242 V

ALERT

Micro-

Controller

V+

VBATT

TLV3012

Figure 10-3. Under-Voltage Detection

10.2.1.1 Design Requirements

For this design, follow these design requirements:

• Operate from power supply that powers the microcontroller.

• Under-voltage alert is active low.

• Logic low output when VBAT is less than 2.0V.

10.2.1.2 Detailed Design Procedure

Configure the circuit as shown in Figure 10-3. Connect (V+) to VBAT which also powers the microcontroller.

Resistors R1 and R2 create the under-voltage alert level of 2.0 V. When the battery voltage sags down to 2.0

V, the resistor divider voltage crosses VREF, the 1.242 V reference threshold of the TLV3012. This causes the

comparator output to transition from a logic high to a logic low. The push-pull output of the TLV3012 is selected

since the comparator operating voltage is shared with the microcontroller which is receiving the under-voltage

alert signal.

Equation 2 is derived from the analysis of Figure 10-3.

(2)

where

TLV3011, TLV3012, TLV3011B, TLV3012B

SBOS300C – FEBRUARY 2004 – REVISED APRIL 2023

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TLV3012 bảng dữ liệu(PDF) 24 Page - Texas Instruments