MS85RS1MTY datasheet(23/43 Pages) RAMXEED

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MS85RS1MTY(AEC-Q100 Compliant)

DS501-00096-1v0-E



FeRAM CHARACTERISTICS

*1:The value for Read/Write endurance apply to the total number of read and write operations per row in FeRAM.

This is because FeRAM needs writing operation after each reading operations. Each row in the memory

array has 32 internal outputs, and 8 outputs are selected by A0 and A1. In continuous Read/Write operations,

after selecting a certain address and automatically incrementing until A0 and A1 change from (0,0) to (1,1),

the Read/Write count endurance count is totaled as one operation. Subsequently, when incrementing auto-

matically and switching to the next row, each row is counted as a new Read/Write operation. If /CS is raised

and then the same row is selected again, it is counted as the second operation for that row.

*2: Minimum values define retention time of the first reading/writing data right after shipment, and these values

are calculated by qualification results.

*3: Under evaluation for more than 5.9 years(+125 C).



NOTE ON USE

We recommend programming of the device after reflow except for special sector region and serial number

region. Data written before reflow cannot be guaranteed.

Parameter

Value

Unit

Remarks

Min

Max

Read/Write Endurance*1

1013



Times

Operation Ambient Temperature TA   125 C

Data Retention*2

5.9 or more*3



Years

Operation Ambient Temperature TA   125 C

19.1



Operation Ambient Temperature TA   105 C

70.4



Operation Ambient Temperature TA   85 C

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