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MS85R4M1TA bảng dữ liệu(PDF) 16 Page - RAMXEED LIMITED |
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MS85R4M1TA bảng dữ liệu(HTML) 16 Page - RAMXEED LIMITED |
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16 / 25 page ![]() 16 DS501-00093-1v1-E MS85R4M1TA POWER ON/OFF SEQUENCE When applying relatively short term VDD pulse whose peak is more than 1.7V, it is required to set falling time, tVF more than 0.4ms/V. (In case VDD rises over 1.7V and falls just after that, if this term is short, device may lose its function.) FeRAM CHARACTERISTICS Item Min Max Unit Parameter Read/Write Endurance*1 1013 *2 ― Times Operation Ambient Temperature TA = + 105 °C 1014 ― Operation Ambient Temperature TA = + 85 °C Data Retention*3 10 ― Years Operation Ambient Temperature TA = + 105 °C 40 Operation Ambient Temperature TA = + 85 °C 95 ― Operation Ambient Temperature TA = + 55 °C ≥ 200 ― Operation Ambient Temperature TA = + 35 °C *1: The values for Read/Write Endurance apply to the total number of read and write operations per row in FeRAM. This is because FeRAM needs writing operation after each reading operations. When switching rows, the number of Read/Write operations is counted for each selected row. However, if only addresses A0, A1 and A2 are switched, no row switching occurs. The memory consists of 64 internal outputs per row, and switching only A0, A1 and A2 selects 8 of these outputs. Each row in the memory array has 64 internal outputs, and 8 outputs are selected by A0, A1 and A2. Therefore, once a certain address is selected, switching only A0, A1 and A2 does not change the selected row, and the Read/Write count is totaled as one operation. For other address switches, each corresponding row is counted once. *2: Evaluating about minimum Read/Write Endurance at +105℃, over 1013 times. *3: The minimum value of Date Retention refers to data retention term from first read/write after the device shipped. The value is estimated from qualification results. NOTE ON USE • We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed. * : /CE (Max) < V DD+0.3V /CE Don’t Care t PD t PU /CE >V DD×0.8* /CE>V DD×0.8* t VF t VR /CE V DD V SS V IH(Min) V IL(Max) V DD(Min) 1.0V V DD V IH(Min) V IL(Max) V SS |
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