DS501-00093-1v1-E

7

MS85R4M1TA



ELECTRICAL CHARACTERISTICS

1. DC Characteristics

(within recommended operating conditions)

Parameter

Sym

-bol

Condition

Value

Unit

Min

Typ

Max(TA

≤

85°C)

Max(TA

≥

85°C)

Input Leakage

Current

|ILI|

VIN = 0V to VDD

―

―

5

μA

Output Leakage

Current

|ILO|

VOUT = 0V to VDD

/CE = VIH or /OE = VIH

―

―

5

μA

Operating Power

Supply Current*1

IDD

/CE = 0.2 V, Iout = 0 mA

―

13.5

16

16

mA

Standby Current

ISB

/ZZ ≥ VDD − 0.2V

/CE, /WE, /OE ≥ VDD − 0.2V

Others ≥ VDD − 0.2V or ≤ 0.2V

―

12

100

150

μA

Sleep Current

IZZ

/ZZ = VSS

/CE, /WE, /OE ≥ VDD − 0.2V

Others ≥ VDD − 0.2V or ≤ 0.2V

―

3.5

10

12

μA

High Level

Input Voltage

VIH

VDD = 1.8V to 3.6V

VDD × 0.8

―

VDD + 0.3

V

Low Level Input

Voltage

VIL

VDD = 1.8V to 3.6V

− 0.3

―

VDD × 0.2

V

High Level

Output Voltage

VOH1 VDD = 2.5V to 3.6V

IOH = − 1.0mA

VDD × 0.8

―

―

V

VOH2 VDD = 1.8V to 2.5V

IOH = − 100μA

VDD − 0.2

―

―

Low Level

Output Voltage

VOL1

VDD = 2.5V to 3.6V

IOL = 2.0mA

―

―

0.4

V

VOL2

VDD = 1.8V to 2.5V

IOL = 150μA

―

―

0.2

*1: During the measurement of IDD, all Address and I/O were taken to only change once per active cycle.

Iout : output current