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L9907 bảng dữ liệu(PDF) 23 Page - STMicroelectronics |
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L9907 bảng dữ liệu(HTML) 23 Page - STMicroelectronics |
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23 / 49 page ![]() DS11800 Rev 5 23/49 L9907 Electrical specifications 48 3.5.6 MOSFET drivers The device is operated in the specified operating range, unless otherwise specified (VCC = 3.20 V to 5.25 V, VB = 4.2 V to 54 V, Tj = -40 °C to 150 °C). ILIM Boost switch current limit - 250 - 500 mA Lbst Boost regulator inductance - - 47 - µH Cbst Boost regulator capacitance - - 2 - µF fSW_BST Boost regulator switching frequency - 280 350 420 kHz BST_HOV Boost over voltage threshold - 63 - 73 V BST_HOV _HYST Boost over voltage hysteresis - 8 - 10 V Tbst Boost regulator start-up time (design info) Cbst = 2 µF - 1 - ms VCAP Supply voltage for the LS gate driver ICAP = 25 mA V(SLS3) +8.5 - V(SLS3) +15 V ICAP Output current for the voltage regulator for the LS VB = 14 V -65 - -20 mA VCBSX Bootstrap capacitor voltage V(CBSx)-V(SHSx) V(SHSx) = 14 V, ICBSX = -6 mA 8.5 - 15 V ICBSX Bootstrap capacitor charge current at pin CBSx -6 - 18 mA Table 16. Boost converter electrical characteristics (continued) Symbol Parameter Test condition Min Typ Max Unit Table 17. MOSFET drivers electrical characteristics Symbol Parameter Test condition Min Typ Max Unit VGS(L) Low level output voltage VGx-VSx @ I= 50 mA - 100 250 mV VGS(H) High level output voltage VGx-VSx @ I= -5 mA 7.5 - 15 V IGxx_1 Turn-on/off current with GCR = 1 kΩ (1) IG_1,IG_0 = 11 100% Imax 450 600 750 mA IG_1,IG_0 = 10 75% Imax 337 450 563 mA IG_1,IG_0 = 01 50% Imax 225 300 375 mA IG_1,IG_0 = 00 25% Imax 112 150 188 mA IGxx_2 Turn-on/off current with GCR = 6 kΩ IG_1,IG_0 = 11 100% Imax 75 100 125 mA IG_1,IG_0 = 10 75% Imax 56 75 94 mA IG_1,IG_0 = 01 50% Imax 37 50 63 mA IG_1,IG_0 = 00 25% Imax 18 25 32 mA ISLSx(2) Low-side driver SLS output current GCR = 1 kΩ, PWM signals low - - 3.3 mA ISHSx(2) High-side driver SHS output current GCR = 1 kΩ, PWM signals low - -3.3 mA GCR_STG Gate driver over current protection - - - 880 Ω GCR_OL Gate driver under current protection - 22 - - kΩ RGxxON ON-resistance of SINK stage GCR = 1 kΩ, IG_1,IG_0=11, I = 25 mA injected into Gate pin -- 5 Ω |
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