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CB45000 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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CB45000 bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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CB45000 SERIES
®
I/O BUFFER LIBRARY
The CB45000 does not use traditional I/O cell
design; SGS-THOMSON was one of the pioneers
of the emerging “Flexible I/O” approach and the
CB45000 features variable bonding and a flexible
output transistor scheme based on a predefined
set of I/O transistor subcells.
These subcells can be quickly configured using
metallization layers to conform to a variety of I/O
specifications whilst maintaining optimal ESD
protection
levels
and
latch-up
prevention
characteristics.
The I/O circuitry also includes subcells of
specialized transistors that are used to form the
slew rate control sections of each I/O line.
Current spike suppression logic ensures that
conducting transistors are turned off before the
opposing set are turned on.
The bond pad itself is variable in terms of pitch
and size and even supports staggered bonding
methodologies.
This
is
becoming
far
more
Table 2 Voltage Multipliers
VDD
KV
2.7
1.20
3.0
1.11
3.3
1.00
3.6
0.94
Figure 3
Flexible IO Buffer Technology
OUTPUT
DRIVE
TRANSISTORS
LOGIC CIRCUITS
TEST INTERFACE
SLEW CONTROL
DIE CORE
GUARDRING
EDGE OF DIE
DIODES
ESD CLAMP
STRUCTURES
OUTPUT
DRIVE
TRANSISTORS
LOGIC CIRCUITS
TEST INTERFACE
SLEW CONTROL
DIODES
ESD CLAMP
STRUCTURES
OUTPUT
DRIVE
TRANSISTORS
LOGIC CIRCUITS
TEST INTERFACE
SLEW CONTROL
DIODES
ESD CLAMP
STRUCTURES
OUTPUT
DRIVE
TRANSISTORS
LOGIC CIRCUITS
TEST INTERFACE
SLEW CONTROL
DIODES
ESD CLAMP
STRUCTURES
OUTPUT
DRIVE
TRANSISTORS
LOGIC CIRCUITS
TEST INTERFACE
SLEW CONTROL
DIODES
ESD CLAMP
STRUCTURES
OUTPUT
DRIVE
TRANSISTORS
LOGIC CIRCUITS
TEST INTERFACE
SLEW CONTROL
DIODES
ESD CLAMP
STRUCTURES
GUARDRING
EDGE OF DIE
Programmable pad locations allows
one IO cell library to be used for both
staggered and linear bonding.
DIE CORE



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