MB85RS64T

18

DS501-00058-2v0-E



POWER ON/OFF SEQUENCE

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2 : Minimum values define retention time of the first reading/writing data right after shipment, and the these

values are calculated by qualification results.



NOTE ON USE

We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.

Parameter

Symbol

Value

Unit

Min

Max

CS level hold time at power OFF

tpd

400



ns

CS level hold time at power ON

tpu

250





s

Power supply rising time

tr

0.05



ms/V

Power supply falling time

tf

0.1



ms/V

Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1013



Times/byte Operation Ambient Temperature T

A

 

85 C

Total number of reading and writing.

Data Retention*2

40.2



Years

Operation Ambient Temperature TA   85 C

383



Operation Ambient Temperature TA   55 C

CS >VDD

× 0.7 *

tpd

tpu

tr

tf

VIL (Max)

1.0 V

VIH (Min)

VDD(Min)

VDD

CS : don't care

CS >VDD

× 0.7 *

CS

CS

VIL (Max)

1.0 V

VIH (Min)

VDD(Min)

VDD

VSS

VSS

* : CS (Max) < VDD  0.5 V