14

DS501-00024-6v1-E

MB85R4M2T



POWER ON/OFF SEQUENCE



FeRAM CHARACTERISTICS

Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1013

―

Times/16 bits Operation Ambient Temperature

TA = + 85 °C

Data Retention*2

10

―

Years

Operation Ambient Temperature

TA = + 85 °C

95

―

Operation Ambient Temperature

TA = + 55 °C

≥ 200

―

Operation Ambient Temperature

TA = + 35 °C

*1: Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2: Minimum values define retention time of the first reading/writing data right after shipment, and these

values are calculated by qualification results.



NOTE ON USE

• We recommend programming of the device after reflow. Data written before reflow cannot be

guaranteed.

* : /CE (Max) < V

DD+0.3V

/CE Don’t Care

t

PD

t

PU

/CE >V

DD×0.8*

/CE>V

DD×0.8*

t

VF

t

VR

/CE

V

DD

V

SS

V

IH(Min)

V

IL(Max)

V

DD(Min)

1.0V

V

DD

V

IH(Min)

V

IL(Max)

V

SS