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ST10F271Z1 bảng dữ liệu(PDF) 35 Page - STMicroelectronics |
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ST10F271Z1 bảng dữ liệu(HTML) 35 Page - STMicroelectronics |
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35 / 185 page ![]() ST10F271Z1 Internal Flash memory 35/185 5.5 Protection strategy The protection bits are stored in non-volatile Flash cells inside IFlash module, that are read once at reset and stored in 4 Volatile registers. Before they are read from the non-volatile cells, all the available protections are forced active during reset. The protections can be programmed using the set protection operation (see Flash control registers paragraph), that can be executed from all the internal or external memories except from the Flash itself. Two kind of protections are available: write protections to avoid unwanted writings and access protections to avoid piracy. In next paragraphs all different level of protections are shown, and architecture limitations are highlighted as well. 5.5.1 Protection registers The 4 non-volatile protection registers are one time programmable for the user. One register (FNVWPIR) is used to store the write protection fuses respectively for each sector IFlash module. The other three registers (FNVAPR0 and FNVAPR1L/H) are used to store the access protection fuses. 5.5.2 Flash non-volatile write protection I register 5.5.3 Flash non-volatile access protection register 0 FNVWPIR (0x08 DFB0) NVR Reset value: FFFFh 15 14 13 12 11 10 987 65432 10 reserved W0P7W0P6W0P5W0P4W0P3W0P2W0P1W0P0 RW RW RW RW RW RW RW RW Table 19. Flash non-volatile write protection I register Bit Function W0P(9:0) Write protection bank 0 / sectors 9-0 (IFlash) These bits, if programmed at 0, disable any write access to the sectors of bank 0 (IFlash) FNVAPR0 (0x08 DFB8) NVR Reset value: ACFFh 15 14 13 12 11 10 987 65432 10 reserved DBGP ACCP RW RW |
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