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ST10F271Z1 bảng dữ liệu(PDF) 159 Page - STMicroelectronics

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ST10F271Z1 bảng dữ liệu(HTML) 159 Page - STMicroelectronics

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ST10F271Z1
Electrical characteristics
159/185
The given values of CA do not include the stray capacitance of the package and of the
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C0) and the package capacitance
between XTAL1 and XTAL2 pins is globally assumed equal to 10 pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
25.8.12
32 kHz oscillator specifications
VDD = 5 V ± 10%, VSS = 0 V, TA = –40 to +125 °C
1.
At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
the current biasing is reduced to lower the power consumption of the system.
2.
Not 100% tested, guaranteed by design characterization.
Figure 51.
32 kHz crystal oscillator connection diagram
Table 73.
Main oscillator negative resistance (module)
CA = 15 pF
CA = 25 pF
CA = 35 pF
min.
typ.
max.
min.
typ.
max.
min.
typ.
max.
4 MHz
545
Ω
1035
Ω
–
550
Ω
1050
Ω
–
430
Ω
850
Ω
–
8 MHz
240
Ω
450
Ω
–
170
Ω
350
Ω
–
120
Ω
250
Ω
–
Table 74.
32kHz oscillator characteristics
Symbol
Parameter
Conditions
Value
Unit
min.
typ.
max.
gm32
Oscillator transconductance 1)
Start-up
20
31
50
µA/V
Normal run
8
17
30
µA/V
VOSC32 Oscillation amplitude
2)
Peak to peak
0.5
1.0
2.4
V
VAV32
Oscillation voltage level 2)
Sine wave middle
0.7
0.9
1.2
V
tSTUP32 Oscillator start-up time
2)
Stable VDD
–15
s
CA
CA
crystal
ST10F271Z1



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