SY75608/612

DS20006363D-page 6

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2021 - 2023 Microchip Technology Inc. and its subsidiaries

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (VDD) ................................................................................................................................–0.5V to +4.6V

Input Voltage (VIN).............................................................................................................................–0.5V to VDD + 0.5V

Input ESD Protection (HBM) ......................................................................................................................................2 kV

Operating Ratings ‡

1.8V Operating Voltage (VDD) ...............................................................................................................+1.62V to +1.98V

2.5V Operating Voltage (VDD) ...............................................................................................................+2.25V to +2.75V

3.3V Operating Voltage (VDD) ...............................................................................................................+2.97V to +3.63V

† Notice: Permanent device damage may occur if absolute maximum ratings are exceeded. This is a stress rating only

and functional operation is not implied at conditions other than those detailed in the operational sections of this data

sheet. Exposure to absolute maximum ratings conditions may affect device reliability.

‡ Notice: The data sheet limits are not guaranteed if the device is operated beyond the recommended operating

conditions.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics: VDD = 3.3V ±10%, VDD = 2.5V ±10%, VDD = 1.8V ±10%, TA = –40°C to +105°C.

Parameter

Symbol

Min.

Typ.

Max.

Units

Conditions

Current Consumption

Core Device Current

IDD

—

13

15

mA

All outputs and XTAL disabled.

Both reference inputs fed with

100 MHz differential clock.

Core Device Current

IDD_XTAL

—

13

15

mA

All outputs disabled; XTAL circuit

enabled with 25 MHz Crystal

connected between XIN and XOUT

Current Dissipation per

LPHCSL Output (100Ω)

IDD_HCSL_100Ω

—

3.5

3.9

mA

Note 1

Current Dissipation per

LPHCSL Output (85Ω)

IDD_HCSL_85Ω

—

4.0

4.4

mA

Note 1

Power Supply Noise Rejection Ratio

Power Supply Noise

Rejection Ratio

PSNRRHCSL

—

70

—

dB

100 mVPP, 100 kHz noise injected

to VDD. Clock Frequency 100 MHz,

VDD = 3.3V

Input

Input Slew Rate

SRIN

0.6

—

—

V/ns

—

Differential Input High

Voltage

VIH

0.15

—

—

V

—

Differential Input Low

Voltage

VIL

—

—

–0.15

V

—

Input Voltage Swing

VASWING

0.15

—

—

V

—

Absolute Crossing Point

Voltage

VCROSS

0.25

—

0.55

V

—

Variation of VCROSS Over

All Edges

VCROSSDELTA

—

—

0.14

V

—

Voltage High for Control

Inputs

VIH_OE

0.7*VDD

—

—

V

—

Voltage Low for Control

Inputs

VIL_OE

—

—

0.3*VDD

V

—