TLP785,TLP785F

2015-10-09

1

1

2

3

4

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

TOSHIBA Photocoupler

GaAs IRED & Photo

−Transistor

TLP785, TLP785F

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission between Different Voltage

Circuits

The TOSHIBA TLP785 consists of a silicone phototransistor optically

coupled to a gallium arsenide (GaAs) infrared emitting diode in a four

lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5 kVRMS (min)).

TLP785F is a lead forming type for the long creepage surface mounting

of TLP785.

• TLP785: 7.62 mm pitch type DIP4

• TLP785F: 10.16 mm pitch type DIP4

• Collector-emitter voltage: 80 V (min)

• Current transfer ratio: 50% (min)

Rank GB: 100% (min)

• Isolation voltage: 5000 Vrms (min)

• UL approved : UL1577, File No.E67349

• c-UL approved :CSA Component Acceptance Service

No. 5A, File No.E67349

• Option (D4) VDE approved : DIN EN60747-5-5(Note 1)

• CQC-approved: GB4943.1, GB8898 China Factory

• SEMKO approved: EN60065:2002

EN60950-1:2001, EN60335-1:2002

Note 1 : When a EN60747-5-5 approved type is needed, please

designate “Option(D4)”

• Construction mechanical rating

7.62 mm Pitch

Standard Type

10.16 mm Pitch

TLPxxxF Type

Creepage distance

7.0 mm (min)

8.0 mm (min)

Clearance

7.0 mm (min)

8.0 mm (min)

Insulation thickness

0.4 mm (min)

0.4 mm (min)

Inner creepage distance

4.0 mm (min)

4.0 mm (min)

Unit: mm

TOSHIBA

11-5L1

Weight: 0.25 g (typ.)

Unit: mm

TOSHIBA

11-5L102

Weight: 0.25 g (typ.)

TLP785

TLP785F

Pin Configurations (top view)

Start of commercial production

2010-11