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TLP785F bảng dữ liệu(PDF) 3 Page - Toshiba Semiconductor

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TLP785,TLP785F
2015-10-09
3
Recommended Operating Conditions (Note)
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
―
5
24
V
Forward current
IF
―
16
25
mA
Collector current
IC
―
1
10
mA
Operating temperature
Topr
−25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
―
―
10
μA
Capacitance
CT
V = 0 V, f = 1 MHz
―
30
―
pF
Collector
−emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
―
―
V
Emitter
−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
―
―
V
Collector dark current
ID(ICEO)
VCE = 24 V
―
0.01
0.1
μA
VCE = 24 V ,Ta = 85°C
―
0.6
50
μA
Capacitance (collector to emitter)
CCE
V = 0 V, f = 1 MHz
―
6
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Current transfer ratio
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
50
―
600
%
100
―
600
Saturated CTR
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
―
60
―
%
30
―
―
Collector
−emitter saturation voltage
VCE (sat)
IC = 2.4 mA, IF = 8 mA
―
―
0.4
V
IC = 0.2 mA, IF = 1 mA
Rank GB
―
0.2
―
―
―
0.4
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Capacitance (input to output)
CS
VS = 0 V, f = 1 MHz
―
0.8
―
pF
Isolation resistance
RS
VS = 500 V
1×1012
1014
―
Ω
Isolation voltage
BVS
AC, 60 s
5000
―
―
Vrms
AC, 1 s, in oil
―
10000
―
DC, 60 s, in oil
―
10000
―
Vdc



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