2N1613 datasheet(1/5 Pages) STMICROELECTRONICS

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2N1613

2N1711

January 1989

SWITCHES AND UNIVERSAL AMPLIFIERS

The 2N1613 and 2N1711 are silicon planar epitaxial

NPN transistors in Jedec TO-39 metal case. They

are designed for use in high-performance amplifier,

oscillator and switching circuits.

The 2N1711 is also used to advantage in amplifiers

where low noise is an important factor.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

VCBO

Collector-base Voltage (IE =0)

75

V

VCER

Collector-emitter Voltage (RBE ≤ 10 Ω)50

V

VEBO

Emitter-base Voltage (I C =0)

7

V

I C

Collector Current

500

mA

Pto t

Total Power Dissipation at T amb

≤ 25 °C

at T cas e

≤ 25 °C

at T cas e ≤ 100 °C

0.8

3

1.7

W

Tstg,Tj

Storage and Junction Temperature

– 65 to 200

°C

Products approved to CECC 50002-104 avail-

able on request.

DESCRIPTION

TO-39

INTERNAL SCHEMATIC DIAGRAM

1/5

Số phần tương tự - 2N1613

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	2N1613	51Kb / 8P	NPN medium power transistor 1997 Apr 11
Fairchild Semiconductor	2N1613	378Kb / 10P	NPN Small Signal General Purpose Amplifiers
Micro Electronics	2N1613	92Kb / 2P	NPN LISICON PLANAR EPITAXIAL TRANSISTORS
Microsemi Corporation	2N1613	59Kb / 2P	NPN LOW POWER SILICON TRANSISTOR
Comset Semiconductor	2N1613	214Kb / 3P	SILICON PLANAR EPITAXIAL TRANSISTORS

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Mô tả tương tự - 2N1613

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List of Unclassifed Man...	2SC1788	41Kb / 1P	Medium Power Amplifiers and Switches
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