ISL71841SEH

FN8735 Rev. 8.00

Page 22 of 30

Aug 10, 2023

Post Low Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise

specified, V± = ±12V, VCM =0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This

data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits, nor are they guaranteed.

FIGURE 68. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION

FIGURE 69. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION

FIGURE 70. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION

FIGURE 71. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION

FIGURE 72. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION

FIGURE 73. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION

0

0.2

0.4

0.6

0.8

1.0

1.2

0

10

20

30

40

50

60

LOW DOSE RATE RADIATION (krad(Si))

GROUNDED

BIASED

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0

0

10

20

30

40

50

60

LOW DOSE RATE RADIATION (krad(Si))

GROUNDED

BIASED

0

0.5

1.0

1.5

2.0

2.5

0

10

20

30

40

50

60

LOW DOSE RATE RADIATION (krad(Si))

GROUNDED

BIASED

-5

0

5

10

15

20

25

30

35

0

10

20

30

40

50

60

LOW DOSE RATE RADIATION (krad(Si))

GROUNDED

BIASED

-4

-2

0

2

4

6

8

10

12

0

10

20

30

40

50

60

LOW DOSE RATE RADIATION (krad(Si))

BIASED

GROUNDED

-4

-2

0

2

4

6

8

0

10

20

30

40

50

60

LOW DOSE RATE RADIATION (krad(Si))

GROUNDED

BIASED