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PM6680 bảng dữ liệu(PDF) 36 Page - STMicroelectronics

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Device description
PM6680
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Equation 22
Choose a synchronous rectifier with low RDSon. When high side MOSFET turns on, the fast
variation of the phase node voltage can bring up even the low side gate through its gate-
drain capacitance CRSS, causing cross-conduction problems. Choose a low side MOSFET
that minimizes the ratio CRSS/CGS (CGS = CISS - CRSS).
Below there is a list of some possible low side MOSFETs.
Dual n-channel MOSFETS can be used in applications with a maximum output current of
about 3 A. Below there is a list of some MOSFET manufacturers.
A rectifier across the low side MOSFET is recommended. The rectifier works as a voltage
clamp across the synchronous rectifier and reduces the negative inductor swing during the
dead time between turning the high-side MOSFET off and the synchronous rectifier on. It
can increase the efficiency of the switching section, since it reduces the low side switch
losses. A shottky diode is suitable for its low forward voltage drop (0.3V). The diode reverse
voltage must be greater than the maximum input voltage VINmax. A minimum recovery
reverse charge is preferable. Below there is a list of some shottky diode manufacturers.
Table 14.
Low side MOSFET manufacturer
Manufacturer
Type
RDSon (mΩ)
Rated reverse voltage (V)
ST
STS17NF3LL
5.5
0.047
30
ST
STS25NH3LL
3.5
0.011
30
Table 15.
Dual MOSFET manufacturer
Manufacturer
Type
RDSon (m
Ω) Gate charge (nC)
Rated reverse
voltage (V)
ST
STS8DNH3LL
25
10
30
ST
STS4DNF60L
65
32
60
Table 16.
Shottky diode manufacturer
Manufacturer
Series
Forward
voltage (V)
Rated reverse
voltage (V)
Reverse current
(uA)
ST
STPS1L30M
0.34
30
0.00039
ST
STPS1L20M
0.37
20
0.000075
2
LOAD
max
IN
OUT
DSon
conduction
(max)
I
V
V
1
R
P
×
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
×
=
GS
RSS
C
C



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