Nexperia

PSMN1R2-80ASE

N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

aaa-040963

10-1

1

10

102

1

10

102

103

104

VDS (V)

ID

ID

(A)

(A)

DC

DC

100 ms

100 ms

10 ms

10 ms

1 ms

1 ms

100 µs

100 µs

tp = 10 µs

tp = 10 µs

DC

DC

100ms

100ms

10ms

10ms

1ms

1ms

100us

100us

10us

10us

Limit RDSon = VDS / ID

Limit RDSon = VDS / ID

Tmb = 25 °C (solid black line); Tmb = 125 °C (red dashed line); IDM is a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

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10-3

10-2

10-1

1

10

10-1

1

10

102

103

tAL (ms)

IAL

IAL

(A)

(A)

(1)

(1)

(2)

(2)

(3)

(3)

(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistance from

junction to mounting

base

Fig. 5

-

0.123 0.16

K/W

Fig. 6

-

58

-

K/W

Rth(j-a)

thermal resistance from

junction to ambient

Fig. 7

-

29

-

K/W

PSMN1R2-80ASE

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Product data sheet

29 October 2024

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