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Giải thích chi tiết về linh kiện  N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package
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PSMN1R2-80ASE
N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
80
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
80
V
VGS
gate-source voltage
-20
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
935
W
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
375
A
ID
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 2
-
375
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
2347
A
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering
temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
375
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
2347
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche energy
ID = 109 A; Vsup ≤ 80 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 230 µs; Fig. 4
[1]
-
1300
mJ
IAS
non-repetitive avalanche
current
Vsup = 80 V; VGS = 10 V; Tj(init) = 25 °C;
RGS = 50 Ω; Fig. 4
[1]
-
109
A
[1] Protected by 100% test
Tmb (°C)
0
200
150
50
100
03aa16
40
80
120
Pder
(%)
0
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
aaa-040962
0
25
50
75
100 125 150 175 200
0
100
200
300
400
500
600
Tmb (°C)
ID
ID
(A)
(A)
(1)
(1)
VGS ≥ 10 V
(1) 375 A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN1R2-80ASE
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2024. All rights reserved
Product data sheet
29 October 2024
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