P4C163-35JM datasheet(3/12 Pages) PYRAMID

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P4C163/163L

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Document # SRAM120 REV C

POWER DISSIPATION CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

P4C163

P4C163L

Min

Max

Min

Max

Dynamic Operating

CC = Max., f = Max.,

Mil.

—

145

—

145

Current – 25

Outputs Open

Com’l.

—

125

—

N/A

Dynamic Operating

CC = Max., f = Max.,

Mil.

—

120

—

120

Current – 35, 45

Outputs Open

Com’l.

—

N/A

Standby Power Supply

1 ≥ VIH or

Mil.

—

Current (TTL Input Levels) CE

2 ≤ VIL, VCC = Max.,

Com’l.

—

N/A

f = Max., Outputs Open

SB1

Standby Power Supply

1 ≥ VHC or

Mil.

—

Current

2 ≤ VLC, VCC = Max.,

Com’l.

—

N/A

(CMOS Input Levels)

f = 0, Outputs Open,

IN ≤ VLC or VIN ≥ VHC

DATA RETENTION WAVEFORM

Symbol

Parameter

Test Conditions

Unit

n/a = Not Applicable

DATA RETENTION CHARACTERISTICS (P4C163L, Military Temperature Only)

Typ.*

Max

Symbol

Parameter

Test Condition

Min

CC=VCC=Unit

2.0V

3.0V

2.0V

3.0V

CC for Data Retention

2.0

CCDR

Data Retention Current

200

300

µA

CDR

Chip Deselect to

Data Retention Time

†

Operation Recovery Time

A = +25°C

RC = Read Cycle Time

†

This parameter is guaranteed but not tested.

1 ≥ VCC – 0.2V or

2 ≤ 0.2V, VIN ≥ VCC – 0.2V

or V

IN ≤ 0.2V

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