P4C163-35JM datasheet(4/12 Pages) PYRAMID

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P4C163/163L

Page 4 of 12

Document # SRAM120 REV C

Symbol

Parameter

Unit

-25

-35

-45

Min Max Min Max Min Max

Read Cycle Time

Address Access Time

Chip Enable

Access Time

Output Hold from

Address Change

Chip Enable to

Output in Low Z

Chip Disable to

Output in High Z

Output Enable

Low to Data Valid

OLZ

Output Enable

Low to Low Z

OHZ

Output Enable

High to High Z

Chip Enable to

Power Up Time

Chip Disable to

Power Down Time

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

CC = 5V ± 10%, All Temperature Ranges)

(2)

READ CYCLE NO. 1 (OE

OE CONTROLLED)(5)

Notes:

5. WE is HIGH for READ cycle.

6. CE

1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.

7. ADDRESS must be valid prior to, or coincident with CE

1 transition

LOW and CE

2 transition HIGH.

8. Transition is measured ± 200mV from steady state voltage prior to

change, with loading as specified in Figure 1. This parameter is

sampled and not 100% tested.

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