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P4C163-35JM bảng dữ liệu(PDF) 2 Page - Pyramid Semiconductor Corporation

tên linh kiện P4C163-35JM
Giải thích chi tiết về linh kiện  ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
PDF  12 Pages
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nhà sản xuất  PYRAMID [Pyramid Semiconductor Corporation]
Trang chủ  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C163-35JM bảng dữ liệu(HTML) 2 Page - Pyramid Semiconductor Corporation

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P4C163/163L
Page 2 of 12
Document # SRAM120 REV C
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
–0.5 to +7
V
Respect to GND
Terminal Voltage with
–0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
(up to 7.0V)
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
–55 to +125
°C
Bias
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
Ambient
Temperature
Commercial
0°C to +70°C
0V
5.0V ± 10%
Grade(2)
GND
V
CC
Grade(2)
GND
V
CC
Ambient
Temperature
Military
–55 to +125°C
0V
5.0V ± 10%
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C163
P4C163L
Min
Max
Min
Max
V
IH
Input High Voltage
2.2
V
CC+0.5
2.2
V
CC+0.5
V
V
IL
Input Low Voltage
–0.5(3)
0.8
–0.5(3)
0.8
V
V
HC
CMOS Input High Voltage
V
CC–0.2
V
CC+0.5
V
CC–0.2
V
CC+0.5
V
V
LC
CMOS Input Low Voltage
–0.5(3)
0.2
–0.5(3)
0.2
V
V
CD
Input Clamp Diode Voltage
V
CC = Min., IIN = –18 mA
–1.2
–1.2
V
V
OL
Output Low Voltage
I
OL = +8 mA, VCC = Min.
0.4
0.4
V
(TTL Load)
V
OLC
Output Low Voltage
I
OLC = +100 µA, VCC = Min.
0.2
0.2
V
(CMOS Load)
V
OH
Output High Voltage
I
OH = –4 mA, VCC = Min.
2.4
2.4
V
(TTL Load)
V
OHC
Output High Voltage
I
OHC = –100 µA, VCC = Min.
V
CC–0.2
V
CC–0.2
V
(CMOS Load)
I
LI
Input Leakage Current
V
CC = Max.
Mil.
–10
+10
–5
+5
µA
V
IN = GND to VCC
Com’l.
–5
+5
N/A
N/A
I
LO
Output Leakage Current
V
CC = Max., CE = VIH,
Mil.
–10
+10
–5
+5
µA
V
OUT= GND to VCC
Com’l.
–5
+5
N/A
N/A
Symbol
Parameter
Test Conditions
Unit
Symbol
Parameter
Conditions Typ. Unit
C
IN
Input Capacitance
V
IN = 0V
5
pF
CAPACITANCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
Symbol
Parameter
Conditions Typ. Unit
C
OUT
Output Capacitance
V
OUT = 0V
7
pF
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.



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