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ADA4945-1ACPZ-R7 bảng dữ liệu(PDF) 21 Page - Analog Devices

tên linh kiện ADA4945-1ACPZ-R7
Giải thích chi tiết về linh kiện  High Speed, ±0.1 μV/˚C Offset Drift, Fully Differential ADC Driver
PDF  57 Pages
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nhà sản xuất  AD [Analog Devices]
Trang chủ  http://www.analog.com
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ADA4945-1ACPZ-R7 bảng dữ liệu(HTML) 21 Page - Analog Devices

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Data Sheet
ADA4945-1
analog.com
Rev. A
21 of 57
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise specified.
Table 10. Absolute Maximum Ratings
PARAMETER
RATING
Supply Voltage
11V
VOCM
±VS
Differential Input Voltage
±1V
Operating Temperature Range
−40°C to +125°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
Electrostatic Discharge (ESD) Field Induced Charged Device Model
(FICDM)
1250V
Electrostatic Discharge (ESD)Human Body Model (HBM)
4000V
.
Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product.
This is a stress rating only; functional operation of the product at these or any other conditions above those indicated
in the operational section of this specification is not implied. Operation beyond the maximum operating conditions
for extended periods may affect product reliability.
Thermal Resistance
Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful
attention to PCB thermal design is required.
θJA is the natural convection, junction to ambient, thermal resistance measured in a one cubic foot sealed
enclosure. θJC is the junction to case thermal resistance.
Table 11. Thermal Resistance
Package Type
θJA
θJC
Unit
CP-16-22
70
15
°C/W
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4945-1 package is limited by the associated rise in junction
temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the properties of the
plastic change. Even temporarily exceeding this temperature limit can change the stresses that the package exerts
on the die, permanently shifting the parametric performance of ADA4945-1. Exceeding a junction temperature of
150°C for an extended period can result in changes in the silicon devices, potentially causing failure.
The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in
the package due to the load drive for all outputs. The quiescent power dissipation is the voltage between the supply
pins (±VS) times the quiescent current (Iq). The load current consists of the differential and common-mode currents



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