MPC8250VR datasheet(7/60 Pages) FREESCALE

7 / 60 page

MPC8250 Hardware Specifications, Rev. 1

Freescale Semiconductor

Electrical and Thermal Characteristics

NOTE: Core, PLL, and I/O Supply Voltages

VDDH, VCCSYN, and VDD must track each other and both must vary in

the same direction—in the positive direction (+5% and +0.1 Vdc) or in the

negative direction (-5% and -0.1 Vdc).

This device contains circuitry protecting against damage due to high static voltage or electrical fields;

however, it is advised that normal precautions be taken to avoid application of any voltages higher than

maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused

inputs are tied to an appropriate logic voltage level (either GND or VCC).

Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the

MPC8280. Note that in PCI mode the I/O interface is different.

Figure 2. Overshoot/Undershoot Voltage

Table 3 shows DC electrical characteristics.

Table 3. DC Electrical Characteristics 1

Characteristic

Symbol

Min

Max

Unit

Input high voltage, all inputs except CLKIN

VIH

2.0

3.465

Input low voltage

VIL

GND

0.8

CLKIN input high voltage

VIHC

2.4

3.465

CLKIN input low voltage

VILC

GND

0.4

Input leakage current, VIN = VDDH

IIN

—10

µA

Hi-Z (off state) leakage current, VIN = VDDH

IOZ

—10

µA

Signal low input current, VIL = 0.8 V

—1

µA

Signal high input current, VIH = 2.0 V

—1

µA

Output high voltage, IOH = –2 mA

VOH

2.4

—

GND

GND – 0.3 V

GND – 1.0 V

Not to exceed 10%

GVDD

of tSDRAM_CLK

GVDD + 5%

4 V

VIH

VIL

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