PHT2NQ10T datasheet(3/12 Pages) PHILIPS

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Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

Product data

Rev. 01 — 16 October 2001

3 of 12

9397 750 08918

VGS ≥ 10 V

Fig 1.

Normalized total power dissipation as a

function of solder point temperature.

Fig 2.

Normalized continuous drain current as a

function of solder point temperature.

Tsp =25 °C; IDM is single pulse.

Unclamped inductive load; VDD ≤ 15 V; RGS =50 Ω;

VGS = 10 V; starting Tj =25 °C and 125 °C.

Fig 3.

Safe operating area; continuous and peak drain

currents as a function of drain-source voltage.

Fig 4.

Non-repetitive avalanche ruggedness current

as a function of pulse duration.

03aa17

120

100

150

200

Tsp (

oC)

Pder

(%)

03aa25

120

100

150

200

Tsp (

oC)

Ider

(%)

der

tot

tot 25 C

()

----------------------

100%

der

D25 C

()

-------------------

100%

03ag27

10-2

10-1

102

103

VDS (V)

(A)

100 ms

10 ms

RDSon = VDS/ ID

1 ms

tp = 10 µs

100 µs

03ag34

10-1

10-2

10-1

tp (ms)

IAS

(A)

Tj prior to avalanche = 125 ºC

25 ºC

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